Photodiode structure and image pixel structure

US7009227B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Inna Patrick · Boise, US
• Vladimir Berezin · Copenhagen, DK

Key dates

• Filing date: Jun 16, 2003
• Grant date: Mar 7, 2006
• Expiry date: Jun 16, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/803

Abstract

A CMOS imager with two adjacent pixel active area regions without the presence of an intervening trench isolation region that typically separates two adjacent pixels and their associated photodiodes is provided. The shared active area region isolates the two adjacent photodiodes and provides good substrate to surface pinned layer contact without the presence of n− type dopant ions and due to the presence of p-type dopant ions. As a result, the size of the imager can be reduced and the photodiodes of the two adjacent pixels have increased capacitance.