Low-k interlevel dielectric layer (ILD)

US7009280B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew S. Angyal · Stormville, US
• Edward Barth · Ridgefield, US
• Sanjit Das · Poughkeepsie, US
• Charles R. Davis · Endicott, US
• Habib Hichri · Snyder, US
• William Francis Landers · Wappingers Falls, US
• Jia Lee · San Jose, US

Key dates

• Filing date: Apr 28, 2004
• Grant date: Mar 7, 2006
• Expiry date: May 12, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An interlevel dielectric layer (ILD) comprises a low-k dielectric layer; and a low-k dielectric film, deposited under compressive stress, atop the dielectric layer. The dielectric layer comprises a low-k material, such as an organosilicon glass (OSG) or a SiCOH material. The dielectric film has a thickness, which is 2%–10% of the thickness of the dielectric layer, has a similar chemical composition to the dielectric layer, but has a different morphology than the dielectric layer. The dielectric film is deposited under compressive stress, in situ, at or near the end of the dielectric layer deposition by altering a process that was used to deposit the low-k dielectric layer.