Patent · US Expired

Method and device for testing the ESD resistance of a semiconductor component

US7009404B2 · kind B2 · utility

5Cited by

7References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Wendel · Höhenkirchen-Siegertsbrunn, DE
Richard Owen · Fremont, US
Harald Gossner · Riemerling, DE
Wolfgang Stadler · Hilpoltstein, DE
Philipp Riess · Munich, DE
Martin Streibl · Petershausen, DE
Kai Esmark · Schwanau, DE

Key dates

Filing date	May 31, 2002
Grant date	Mar 7, 2006
Priority date	—
Expiry date	Jul 8, 2022

Classification

Technology area (CPC G)Physics
CPC primaryG01R31/129
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

To test the ESD resistance of a semiconductor component, for example of a NOS transistor, which can be used as a PSD protective element in a chip, a direct current characteristic of the semiconductor component is monitored and the ESD resistance of the respective semiconductor component is inferred depending on this. In particular, the direct current failure threshold of the semiconductor component at which an increased leakage current occurs in the non-conducting direction of the semiconductor component can be monitored in operation of the semiconductor component using an applied direct current and the ESD resistance of the semiconductor component inferred depending on a change in this direct current failure threshold.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.