Method of determining voltage compensation for flash memory devices
US7009887B1 · kind B1 · utility
16Cited by
9References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Mar 7, 2006 |
| Priority date | — |
| Expiry date | Jun 3, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/04
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention determines or identifies programming variations for different groups within an array or memory device that properly program memory cells within the respective groups. Then, during programming operations for a given memory cell, programming voltages are applied according to the determined or identified programming variations for the group to which the given memory cell belongs. These adjusted programming variations facilitate successful programming of the particular memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.