Phase change memory device employing thermal-electrical contacts with narrowing electrical current paths

US7012273B2 · kind B2 · utility

Assignee

• Silicon Storage Technology, Inc. · US

Inventor

• Bomy Chen · Cupertino, US

Key dates

• Filing date: Aug 14, 2003
• Grant date: Mar 14, 2006
• Expiry date: Aug 14, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A phase changing memory device, and method of making the same, that includes contact holes formed in insulation material that extend down to and exposes source regions for adjacent FET transistors. Spacer material is disposed in the holes with surfaces that define openings each having a width that narrows along a depth of the opening. Lower electrodes are disposed in the holes. A layer of phase change memory material is disposed along the spacer material surfaces and along at least a portion of the lower electrodes. Upper electrodes are formed in the openings and on the phase change memory material layer. For each contact hole, the upper electrode and phase change memory material layer form an electrical current path that narrows in width as the current path approaches the lower electrode, such that electrical current passing through the current path generates heat for heating the phase change memory material disposed between the upper and lower electrodes.