Oxidative top electrode deposition process, and microelectronic device structure
US7012292B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.