Semiconductor device formed on (111) surface of a Si crystal and fabrication process thereof
US7012311B2 · kind B2 · utility
33Cited by
16References
14Claims
0Family size
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Key dates
| Filing date | May 29, 2001 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | Oct 20, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a Si crystal having a crystal surface in the vicinity of a (111) surface, and an insulation film formed on said crystal surface, at least a part of said insulation film comprising a Si oxide film containing Kr or a Si nitride film containing Ar or Kr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.