Semiconductor device with a fluorinated silicate glass film as an interlayer metal dielectric film, and manufacturing method thereof
US7012336B2 · kind B2 · utility
2Cited by
21References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2003 |
| Grant date | Mar 14, 2006 |
| Priority date | — |
| Expiry date | May 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P—SiO film, P—SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.