Thin layer metal chemical vapor deposition
US7014709B1 · kind B1 · utility
8Cited by
5References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 3, 2004 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | May 3, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD method deposits conformal metal layers on small features of a substrate surface. The method includes three principal operations: depositing a thin conformal layer of precursor over some or all of the substrate surface; oxidizing the precursor to convert it to a conformal layer of metal oxide; and reducing some or all of the metal oxide to convert it to a conformal layer of the metal itself. The conformal layer of precursor may form a “monolayer” on the substrate surface. Examples of metals for deposition include copper, cobalt, ruthenium, indium, and rhodium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.