High mobility CMOS circuits

US7015082B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Bruce B. Doris · Brewster, US
• Oleg Gluschenkov · Poughkeepsie, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Nov 6, 2003
• Grant date: Mar 21, 2006
• Expiry date: Nov 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device has selectively applied thin tensile films and thin compressive films, as well as thick tensile films and thick compressive films, to enhance electron and hole mobility in CMOS circuits. Fabrication entails steps of applying each film, and selectively removing each applied film from areas that would not experience performance benefit from the applied stressed film.