Exposed pore sealing post patterning

US7015150B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Edward C. Cooney, III · Jericho, US
• John A. Fitzsimmons · Poughkeepsie, US
• Jeffrey P. Gambino · Gresham, US
• Stephen E. Luce · Underhill, US
• Thomas L. McDevitt · Underhill, US
• Lee M. Nicholson · Katonah, US
• Anthony K. Stamper · Williston, US

Key dates

• Filing date: May 26, 2004
• Grant date: Mar 21, 2006
• Expiry date: May 26, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31116
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods and structures having pore-closing layers for closing exposed pores in a patterned porous low-k dielectric layer, and optionally a reactive liner on the low-k dielectric. A first reactant is absorbed or retained in exposed pores in the patterned dielectric layer and then a second reactant is introduced into openings such that it enters the exposed pores, while first reactant molecules are simultaneously being outgassed. The second reactant reacts in-situ with the outgassed first reactant molecules at a mouth region of the exposed pores to form the pore-closing layer across the mouth region of exposed pores, while retaining a portion of each pore's porosity to maintain characteristics and properties of the porous low-k dielectric layer. Optionally, the first reactant may be adsorbed onto the low-k dielectric such that upon introduction of the second reactant into the patterned dielectric openings, a reactive liner is also formed on the low-k dielectric.