Method for forming a layer using a purging gas in a semiconductor process

US7015153B1 · kind B1 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Dina H. Triyoso · Mechanicville, US
• Olubunmi O. Adetutu · Austin, US
• David C. Gilmer · Austin, US
• Darrell Roan · Austin, US
• James K. Schaeffer · Austin, US
• Philip J. Tobin · Austin, US
• Hsing-Huang Tseng · Austin, US

Key dates

• Filing date: Oct 20, 2004
• Grant date: Mar 21, 2006
• Expiry date: Oct 20, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/693
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming at least a portion of a semiconductor device includes providing a semiconductor substrate, flowing a first precursor gas over the substrate to form a first metal-containing layer overlying the semiconductor substrate, and after completing said step of flowing the first precursor gas, flowing a first deuterium-containing purging gas over the first metal-containing layer to incorporate deuterium into the first metal-containing layer and to also purge the first precursor gas. The method may further include flowing a second precursor gas over the first metal-containing layer to react with the first metal-containing layer to form a metal compound-containing layer, and flowing a second deuterium-containing purging gas over the metal compound-containing layer to incorporate deuterium into the metal compound-containing layer and to also purge the second precursor gas.