Method and apparatus for determining plasma impedance
US7015414B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2003 |
| Grant date | Mar 21, 2006 |
| Priority date | — |
| Expiry date | Dec 16, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system, method, and computer readable medium for measuring plasma impedance. The system includes a chamber configured to contain a plasma and including a chuck within an interior area of the chamber, the chuck including a support surface and a bottom surface, and a first voltage-current probe positioned at a first position located exterior to the chamber and on a radio-frequency transmission line between the chamber and a power source. The system also includes a simulation module connected to the first voltage-current probe and arranged to solve, based on measurements transmitted from the first voltage-current probe, a radio-frequency model of the radio-frequency transmission line between the first position and a second position located within the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.