Method for forming a ruthenium metal layer
US7018675B2 · kind B2 · utility
8Cited by
10References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Apr 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a ruthenium metal layer comprises combining a ruthenium precursor with a measured amount of oxygen to form a ruthenium oxide layer. The ruthenium oxide is annealed in the presence of a hydrogen-rich gas to react the oxygen in the ruthenium oxide with hydrogen, which results in a ruthenium metal layer. By varying the oxygen flow rate during the formation of ruthenium oxide, a ruthenium metal layer having various degrees of smooth and rough textures can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.