Patent · US Expired

Method for fabricating a contact hole plane in a memory module

US7018781B2 · kind B2 · utility

5Cited by

5References

29Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Georg Fröhlich · Dresden, DE
Oliver Genz · Dresden, DE
Werner Graf · Chur, CH
Stefan Gruss · Dresden, DE
Matthias Handke · Dresden, DE
Percy Heger · Dresden, DE
Lars Heineck · Dresden, DE
Antje Laessig · Dresden, DE
Alexander Reb · Dresden, DE
Kristin Schupke · Dresden, DE
Momtchil Stavrev · Dresden, DE
Mirko Vogt · Dresden, DE

Key dates

Filing date	Mar 29, 2004
Grant date	Mar 28, 2006
Priority date	—
Expiry date	Mar 29, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH10B12/09
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method for fabricating a contract hole plane in a memory module with an arrangement of memory cells each having a selection transistor. The methods can be utilized during the production of dynamic random access memory (DRAM) modules.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.