Patent · US Expired

Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity

US7018784B2 · kind B2 · utility

0Cited by

9References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jörg Rottstegge · Erlangen, DE
Waltraud Herbst · Uttenreuth, DE
Gertrud Falk · Erlangen, DE
Eberhard Kuhn · Hemhofen, DE

Key dates

Filing date	Feb 27, 2003
Grant date	Mar 28, 2006
Priority date	—
Expiry date	Sep 21, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG03F7/40
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.