Patent · US Expired

Method of manufacturing a semiconductor device including defect inspection using a semiconductor testing probe

US7018857B2 · kind B2 · utility

4Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 12, 2003
Grant dateMar 28, 2006
Priority date
Expiry dateJan 4, 2024

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R3/00
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A manufacturing method for improving the yield in a semiconductor manufacturing process and reducing the manufacturing cost produces a semiconductor device that is inexpensively manufactured and has a high reliability by reliably making contact during inspection with a suitable pressing force, while limiting damage to an electrode pad even when many inspected electrodes are inspected. A substrate used for inspection of the semiconductor device has a beam, a probe on the beam having a projecting shape for coming in contact with an electrode (electrode pad) of the semiconductor device, and a secondary electrode electrically connected to the probe through an electrically conductive member disposed on the side of the beam opposed to the side where the probe is provided. In an inspecting process, an inspecting device having a layer having many projections formed in the probe come in contact with the electrode pad of the semiconductor device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.