Transistor with vertical dielectric structure
US7018876B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jun 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A transistor (103) with a vertical structure (113) that includes a dielectric structure (201) below a semiconductor structure (109). The semiconductor structure includes a channel region (731) and source/drain regions (707, 709). The transistor includes a gate structure (705, 703) that has a portion laterally adjacent to the semiconductor structure and a portion laterally adjacent to the dielectric structure. In one embodiment, the gate structure is a floating gate structure wherein a control gate structure (719) also includes portion laterally adjacent to the dielectric structure and a portion laterally adjacent to the semiconductor structure. In some examples, having a portion of the floating gate and a portion of the control gate adjacent to the dielectric structure acts to increase the control gate to floating gate capacitance without significantly increasing the capacitance of the floating gate to channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.