Method for manufacturing improved sidewall structures for use in semiconductor devices
US7018888B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jul 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
Abstract
The present invention provides a method for manufacturing a semiconductor device and method for manufacturing an integrated circuit including the semiconductor device. The method for manufacturing a semiconductor device (100), among other steps, includes forming a gate structure (130) over a substrate (110), the gate structure (130) having sidewall spacers (210 or 410) on opposing sidewalls thereof and placing source/drain implants (310, 510) into the substrate (110) proximate the gate structure (130). The method further includes removing at least a portion of the sidewall spacers (210 or 410) and annealing the source/drain implants (310, 510) to form source/drain regions (710) after removing the at least a portion of the sidewall spacers (210 or 410).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.