Forming structures that include a relaxed or pseudo-relaxed layer on a substrate
US7018909B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Feb 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68363
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.