Transfer of a thin layer from a wafer comprising a buffer layer
US7018910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jul 8, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.