Method for implanting atomic species through an uneven surface of a semiconductor layer
US7018913B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2004 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Jun 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.