Takeshi Akatsu
21Patents
7h-index
18Co-inventors
58Inventor score
Filing activity: Sep 17, 2003 → Feb 25, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7256075B2 | Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer | Electricity | 12 | Expired |
| US7449394B2 | Atomic implantation and thermal treatment of a semiconductor layer | Electricity | 11 | Active |
| US7326628B2 | Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughness | Electricity | 11 | Expired |
| US7001826B2 | Wafer with a relaxed useful layer and method of forming the wafer | Emerging Cross-Sectional Technologies | 10 | Expired |
| US7323398B2 | Method of layer transfer comprising sequential implantations of atomic species | Electricity | 10 | Expired |
| US7008857B2 | Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom | Electricity | 9 | Expired |
| US7476930B2 | Multi-gate FET with multi-layer channel | Electricity | 7 | Active |
| US7232488B2 | Method of fabrication of a substrate for an epitaxial growth | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7282449B2 | Thermal treatment of a semiconductor layer | Electricity | 6 | Expired |
| US7033905B2 | Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means | Electricity | 5 | Expired |
| US7276428B2 | Methods for forming a semiconductor structure | Electricity | 4 | Expired |
| US6982210B2 | Method for manufacturing a multilayer semiconductor structure that includes an irregular layer | Electricity | 3 | Expired |
| US7375008B2 | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof | Electricity | 3 | Expired |
| US7285495B2 | Methods for thermally treating a semiconductor layer | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7602046B2 | Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof | Electricity | 2 | Expired |
| US7776716B2 | Method for fabricating a semiconductor on insulator wafer | Electricity | 1 | Active |
| US7378729B2 | Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom | Electricity | 0 | Active |
| US7265435B2 | Method for implanting atomic species through an uneven surface of a semiconductor layer | Electricity | 0 | Expired |
| US7018913B2 | Method for implanting atomic species through an uneven surface of a semiconductor layer | Electricity | 0 | Expired |
| US7544265B2 | Method of fabricating a release substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US8012289B2 | Method of fabricating a release substrate | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.