Method for fabricating semiconductor device
US7018930B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2002 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | May 22, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device capable of minimizing deformations of a photoresist pattern and losses of a hard mask. The method includes the steps of: forming an insulating layer for a hard mask on an etch-target layer; forming a sacrificial layer on the insulating layer; forming a photoresist pattern on the sacrificial layer; forming at least one sacrificial hard mask by etching the sacrificial layer with the photoresist pattern as an etching mask; forming the hard mask by etching the insulating layer with the sacrificial hard mask as an etching mask; and forming a predetermined number of patterns by etching the etch-target layer with use of the sacrificial hard mask and the hard mask as etching masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.