Circuit and method for temperature tracing of devices including an element of chalcogenic material, in particular phase change memory devices
US7020014B2 · kind B2 · utility
20Cited by
1References
31Claims
0Family size
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Key dates
| Filing date | Nov 18, 2003 |
| Grant date | Mar 28, 2006 |
| Priority date | — |
| Expiry date | Feb 18, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phase change memory includes a temperature sensor having a resistance variable with temperature with the same law as a phase-change storage element. The temperature sensor is formed by a resistor of chalcogenic material furnishing an electrical quantity that reproduces the relationship between the resistance of a phase change memory cell and temperature; the electrical quantity is processed so as to generate reference quantities as necessary for writing and reading the memory cells. The chalcogenic resistor has the same structure as a memory cell and is programmed with precision, preferably in the reset state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.