Method of fabrication of MIMCAP and resistor at same level
US7022246B2 · kind B2 · utility
12Cited by
8References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jan 6, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed of fabricating a MIMCAP (a capacitor (CAP) formed by successive layers of metal, insulator, metal (MIM)) and a thin film resistor at the same level. A method is also disclosed of fabricating a MIMCAP and a thin film resistor at the same level, and a novel integration scheme for BEOL (back-end-of-line processing) thin film resistors which positions them closer to FEOL (front-end-of-line processing) devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.