Shwu-Jen Jeng
18Patents
8h-index
39Co-inventors
68Inventor score
Filing activity: Nov 1, 1991 → Feb 5, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5282925A | Device and method for accurate etching and removal of thin film | Electricity | 125 | Expired |
| US6656809B2 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | Electricity | 28 | Expired |
| US5286331A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 18 | Expired |
| US6787427B2 | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics | Electricity | 16 | Expired |
| US7022246B2 | Method of fabrication of MIMCAP and resistor at same level | Emerging Cross-Sectional Technologies | 12 | Expired |
| US6927476B2 | Bipolar device having shallow junction raised extrinsic base and method for making the same | Electricity | 11 | Expired |
| US5423940A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 11 | Expired |
| US6506656B2 | Stepped collector implant and method for fabrication | Electricity | 8 | Expired |
| US6531720B2 | Dual sidewall spacer for a self-aligned extrinsic base in SiGe heterojunction bipolar transistors | Electricity | 7 | Expired |
| US7075126B2 | Transistor structure with minimized parasitics and method of fabricating the same | Electricity | 6 | Expired |
| US6660664B1 | Structure and method for formation of a blocked silicide resistor | Electricity | 4 | Expired |
| US5374481A | Polyemitter structure with improved interface control | Emerging Cross-Sectional Technologies | 4 | Expired |
| US7253070B2 | Transistor structure with minimized parasitics and method of fabricating the same | Electricity | 2 | Active |
| US7642569B2 | Transistor structure with minimized parasitics and method of fabricating the same | Electricity | 1 | Active |
| US7491617B2 | Transistor structure with minimized parasitics and method of fabricating the same | Electricity | 1 | Active |
| US8084788B2 | Method of forming source and drain of a field-effect-transistor and structure thereof | Electricity | 0 | Active |
| US8754446B2 | Semiconductor structure having undercut-gate-oxide gate stack enclosed by protective barrier material | Electricity | 0 | Active |
| US7491623B2 | Method of making a semiconductor structure | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.