High speed silicon etching method
US7022616B2 · kind B2 · utility
7Cited by
7References
18Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 13, 2001 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | May 8, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3347
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
This invention provides the following high-rate silicon etching method. An object to be processed W having a silicon region is so set as to be in contact with a process space in a process chamber that can be held in vacuum. An etching gas is introduced into the process space to form a gas atmosphere at a gas pressure of 13 Pa to 1,333 Pa (100 mTorr to 10 Torr). A plasma is generated upon application of RF power. In the plasma, the sum of the number of charged particles such as ions and the number of radicals increases, and etching of the silicon region is performed at a higher rate than in conventional etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.