Highly polar cleans for removal of residues from semiconductor structures
US7022655B2 · kind B2 · utility
10Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Apr 8, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an ionic liquid in one embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.