Resistive memory element
US7023008B1 · kind B1 · utility
37Cited by
1References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Sep 30, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electrically operated, resistive memory element includes a volume of resistive memory material, adapted to be switched between different detectable resistive states in response to selected enery pulses; means for delivering electrical signals to at least a portion of the volume of resistive memory material; and a volume of heating material for Ohmic heating of the resistive memory material in response to the electrical signals. The volume of heating material is embedded in the volume of resistive memory material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.