Trench capacitor vertical structure
US7023041B2 · kind B2 · utility
5Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Jan 13, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
A versatile structure is formed, based on a deep trench, vertical transistor DRAM cell, that forms a conductive extension of the trench electrode in an elongated trench that contacts the lower electrode of the vertical transistor. The structure can be used as a capacitor, as a discrete transistor as a single-transistor amplifier or as a building block for more complex circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.