CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding
US7023057B2 · kind B2 · utility
12Cited by
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17Claims
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Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Apr 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are separated by a conductive or insulating interface is provided. Also provided are the hybrid substrate produced by the method as well as using the direct bonding method to provide an integrated semiconductor structure in which various CMOS devices are built upon a surface orientation that enhances device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.