System for programming non-volatile memory with self-adjusting maximum program loop
US7023737B1 · kind B1 · utility
36Cited by
11References
26Claims
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Key dates
| Filing date | Aug 1, 2005 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The maximum allowable number of voltage programming pulses to program memory elements of a non-volatile memory device is adjusted to account for changes in the memory elements which occur over time. Programming pulses are applied until the threshold voltage of one or more memory elements reaches a certain verify level, after which a defined maximum number of additional pulses may be applied to other memory elements to allow them to also reach associated target threshold voltage levels. The technique enforces a maximum allowable number of programming pulses that can change over time as the memory is cycled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.