Jun Wan
118Patents
27h-index
139Co-inventors
93Inventor score
Filing activity: Feb 26, 2003 → Jan 13, 2025
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7009889B2 | Comprehensive erase verification for non-volatile memory | Physics | 73 | Expired |
| USD757769S1 | Display screen or portion thereof with a graphical user interface | General | 56 | Active |
| US7170788B1 | Last-first mode and apparatus for programming of non-volatile memory with reduced program disturb | Physics | 55 | Expired |
| US6962436B1 | Digitizing temperature measurement system and method of operation | Electricity | 53 | Expired |
| US7450433B2 | Word line compensation in non-volatile memory erase operations | Physics | 51 | Expired |
| US7075353B1 | Clock generator circuit stabilized over temperature, process and power supply variations | Physics | 46 | Expired |
| US7457178B2 | Trimming of analog voltages in flash memory devices | Physics | 45 | Active |
| US8379454B2 | Detection of broken word-lines in memory arrays | Physics | 45 | Active |
| US7295478B2 | Selective application of program inhibit schemes in non-volatile memory | Physics | 40 | Expired |
| US7119612B1 | Dual-channel instrumentation amplifier | Electricity | 39 | Expired |
| US7474230B2 | RFID temperature logger incorporating a frequency ratio digitizing temperature sensor | Physics | 38 | Active |
| US8036044B2 | Dynamically adjustable erase and program levels for non-volatile memory | Physics | 38 | Active |
| US7606074B2 | Word line compensation in non-volatile memory erase operations | Physics | 38 | Active |
| US6736540B1 | Method for synchronized delta-VBE measurement for calculating die temperature | Physics | 37 | Expired |
| US7254071B2 | Flash memory devices with trimmed analog voltages | Physics | 37 | Expired |
| US7023737B1 | System for programming non-volatile memory with self-adjusting maximum program loop | Physics | 36 | Expired |
| US6957910B1 | Synchronized delta-VBE measurement system | Physics | 35 | Expired |
| US8145855B2 | Built in on-chip data scrambler for non-volatile memory | Physics | 34 | Active |
| US6831504B1 | Constant temperature coefficient self-regulating CMOS current source | Physics | 33 | Expired |
| US10026486B1 | First read countermeasures in memory | Physics | 32 | Active |
| US7218552B1 | Last-first mode and method for programming of non-volatile memory with reduced program disturb | Physics | 32 | Expired |
| US7349258B2 | Reducing read disturb for non-volatile storage | Physics | 31 | Expired |
| US6869216B1 | Digitizing temperature measurement system | Electricity | 31 | Expired |
| US7236048B1 | Self-regulating process-error trimmable PTAT current source | Physics | 30 | Expired |
| US8473809B2 | Data coding for improved ECC efficiency | Physics | 28 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.