Semiconductor laser based on matrix, array or single triangle optical cavity with spatially distributed current injection
US7023892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2002 |
| Grant date | Apr 4, 2006 |
| Priority date | — |
| Expiry date | May 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.