Method for determining parameters for lithographic projection, a computer system and computer program therefor, a method of manufacturing a device and a device manufactured thereby
US7026082B2 · kind B2 · utility
11Cited by
4References
16Claims
0Family size
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Key dates
| Filing date | Dec 4, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Jul 23, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The method involves selecting features of a pattern to be imaged, notionally dividing the source into a plurality of source elements, for each source element, calculating the process window for each selected feature and then the OPC rules that optimize the overlap of the calculated process windows. Finally, those source elements are selected for which the overlapping of the process windows and the OPC rules satisfy specified criteria. The selected source elements define the source intensity distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.