Method for forming a bottle-shaped trench
US7026210B2 · kind B2 · utility
0Cited by
9References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 9, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0387
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer and a trench formed thereon is provided. Sidewall protective layers are then formed on the upper sidewalls of the trench. A masking layer is formed at the bottom of the trench, followed by wet etching to remove the semiconductor substrate not covered by the sidewall protective layers thus forming a bottle-shaped trench. Finally, the masking layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.