Magnetoresistive effect element, magnetic memory device and manufacturing method of magnetoresistive effect element and magnetic memory device
US7026671B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2003 |
| Grant date | Apr 11, 2006 |
| Priority date | — |
| Expiry date | Feb 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49034
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and meth…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.