Method to restore hydrophobicity in dielectric films and materials
US7029826B2 · kind B2 · utility
16Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Nov 19, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silica dielectric films, whether nanoporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. The invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.