Method for manufacture of magneto-resistive bit structure
US7029923B2 · kind B2 · utility
2Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Mar 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic bit structure for a magneto-resistive memory is disclosed that has bit ends that are sufficiently large to accommodate a minimum size contact or via hole. By providing such an arrangement, the magnetic bit structure may be fabricated using conventional contact and/or via processing steps. As such, the cost of manufacturing the device may be reduced, and the overall achievable yield may be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.