Method of repairing an integrated electronic circuit using a formed electrical isolation
US7029927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2004 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Feb 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of repairing a defect in an integrated electronic circuit caused by an incorrect lithographic mask includes the formation of an electrical isolation between two conducting parts of the circuit. The electrical isolation is obtained by at least partly filling, with an electrically insulating material, a volume hollowed out beforehand which would otherwise, and incorrectly, form an electrical connection between the two conducting parts. To do this, a mask having an aperture revealing the hollowed out volume is formed on the circuit, and the mask used to direct the filling of the electrically insulating material and correction of the lithography defined defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.