Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
US7030034B2 · kind B2 · utility
229Cited by
6References
53Claims
0Family size
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Key dates
| Filing date | Sep 18, 2003 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.