III group nitride compound semiconductor luminescent element
US7030414B2 · kind B2 · utility
8Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Apr 22, 2002 |
| Grant date | Apr 18, 2006 |
| Priority date | — |
| Expiry date | Apr 22, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A Group III nitride compound semiconductor light-emitting device includes a multilayer having a quantum well structure containing an InGaN well layer and an AlGaN barrier layer. The film thickness, growth rate and growth temperature of the InGaN layer as the well layer and the film thickness of the AlGaN layer as the barrier layer are controlled to be optimized to thereby improve an output of the light-emitting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.