Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
US7033447B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2002 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Mar 4, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/16
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330° C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.