Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
US7033881B2 · kind B2 · utility
8Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2004 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jul 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In an MRAM cell, the writing current is encased in a low-reluctance material that is treated in one of several ways to render the material closest to the storage element ineffective to carry magnetic flux, thereby establishing a horseshoe-shaped cross section that focuses the flux toward the storage element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.