Methods of forming capacitor constructions
US7033884B2 · kind B2 · utility
13Cited by
32References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jan 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes capacitor constructions comprising a layer of aluminum oxide between a high-k dielectric material and a layer comprising titanium and nitrogen. The layer comprising titanium and nitrogen can be, for example, titanium nitride and/or boron-doped titanium nitride. The capacitor constructions can be incorporated into DRAM cells, which in turn can be incorporated into electronic systems. The invention also includes methods of forming capacitor constructions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.