Gap filling with a composite layer

US7033945B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Jeong Soo Byun · Cupertino, US
• Zheng Yuan · San Jose, US
• Shankar Venkataraman · Santa Clara, US
• M. Ziaul Karim · San Jose, US
• Thanh Pham · San Jose, US
• Ellie Yieh · San Jose, US

Key dates

• Filing date: Jun 1, 2004
• Grant date: Apr 25, 2006
• Expiry date: Jun 1, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76224
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of filling a gap formed between adjacent raised surfaces on a substrate. In one embodiment the method comprises depositing a boron-doped silica glass (BSG) layer over the substrate to partially fill the gap using a thermal CVD process; exposing the BSG layer to a steam ambient at a temperature above the BSG layer's Eutectic temperature; removing an upper portion of the BSG layer by exposing the layer to a fluorine-containing etchant; and depositing an undoped silica glass (USG) layer over the BSG layer to fill the remainder of the gap.