Methods for manufacturing silicon wafer and silicone epitaxial wafer, and silicon epitaxial wafer
US7033962B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 30, 2002 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Jul 27, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing higher density of oxide precipitates and larger sizes thereof at a stage prior to a device fabrication process. The present invention is a method for manufacturing a silicon wafer wherein the silicon wafer is subjected to heat treatment to impart a gettering capability thereto comprising at least the following three steps of: a temperature raising step A for generating oxygen precipitation nuclei; a temperature raising step B for growing the oxygen precipitation nuclei; and a constant temperature keeping step C for growing the oxygen precipitation nuclei into oxide precipitates of larger sizes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.