Magnetoresistive effect element and magnetic memory device
US7034348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2003 |
| Grant date | Apr 25, 2006 |
| Priority date | — |
| Expiry date | Aug 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3277
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer 5 and magnetization free layer 7) opposed to each other through an intermediate layer 6 to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element 1 in which at least one of the pair of ferromagnetic layers 5, 7 contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.