Atomic layer deposition for fabricating thin films
US7037574B2 · kind B2 · utility
61Cited by
74References
30Claims
0Family size
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Key dates
| Filing date | May 23, 2001 |
| Grant date | May 2, 2006 |
| Priority date | — |
| Expiry date | Jul 9, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24843
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An atomic layer deposition (ALD) process deposits thin films for microelectronic structures, such as advanced gap and tunnel junction applications, by plasma annealing at varying film thicknesses to obtain desired intrinsic film stress and breakdown film strength. The primary advantage of the ALD process is the near 100% step coverage with properties that are uniform along sidewalls. The process provides smooth (Ra˜2 Å), pure (impurities<1 at. %), AlOx films with improved breakdown strength (9–10 MV/cm) with a commercially feasible throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.